BCW68G pnp epit a xial silicon transistor surf ace mount small signal transist o rs absolute maximum ra tings at t a =25 ch aracteristic sy mb o l ratin g un it collector-emitter v o ltage vceo -45 v collector-base v o ltage vcbo -60 v collector current ic -800 ma collector dissipation t a =25 * p d 225 mw junction t e mperature t j 150 storage t e mperature t s tg -65-150 1 . base 2. e m i t te r 3. c o l le c t o r 1. 1. 3 2. 4 2 . 9 1 . 9 0 . 9 5 0 . 9 5 0 . 4 u n i t:m m electrical characteristics at t a =25 cha r a c t e r is tic sy mbol min ma x unit t e s t conditions dc current gain hfe 120 400 vce= -1.0v ic= -10ma collector-emitter saturation v o ltage vce( sat) -1.5 v ic= -300ma ib= -30ma gain bandw idth product f t 100 mhz vce= -5v ic= - 10ma f= 50mhz * t o tal device dissipation : fr=1 x 0.75 x 0.062in board,derate 25 . # pulse t e st: pulse w i dth 300us,duty cy cle 2% http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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